2n5551 npn silicon transistor high voltage switching transistor ? features * high collector-emitter voltage: v ceo =160v * high current gain ? applications * telephone switching circuit * amplifier to-92 1 1 sot-89 ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing 2n5551-x-ab3-r 2n5551l-x-ab3-r 2n5551g-x-ab3-r sot-89 b c e tape reel 2N5551-X-T92-B 2n5551l-x-t92-b 2n5551g-x-t92-b to-92 e b c tape box 2n5551-x- 251 -k 2n5551l-x-251 -k 2n5551g-x-251 t o-251 e b c tube
? absolute maximum ratings (ta=25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6 v collector dissipation to-92 625 mw collector dissipation sot-89 p c 500 mw collector current i c 600 ma junction temperature t j +150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100 a, i e =0 180 v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 160 v emitter-base breakdown voltage bv ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =120v, i e =0 50 na emitter cut-off current i ebo v be =4v,i c =0 50 na dc current gain(note) h fe1 h fe2 h fe3 v ce =5v, i c =1ma v ce =5v, i c =10ma v ce =5v, i c =50ma 80 80 80 160 400 collector-emitter satu ration voltage v ce(sat) i c =10ma, i b =1ma i c =50ma, i b =5ma 0.15 0.2 v base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma i c =50ma, i b =5ma 1 1 v current gain bandwidth product f t v ce =10v, i c =10ma, f=100mhz 100 300 mhz output capacitance c ob v cb =10v, i e =0 f=1mhz 6.0 pf noise figure nf i c =0.25ma, v ce =5v r s =1k , f=10hz ~ 15.7khz 8 db note: pulse test: pw<300 s, duty cycle<2% ? classification of h fe rank a b c range 80-170 150-240 200-400
2n5551 npn silicon transistor ? typical characteristics dc current gain collector current, i c (ma) v ce =5v collector output capacitance collector-base voltage (v) 0 2 4 6 8 10 f=1mhz i e =0 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 collector current, i c (ma) saturation voltage (v) current gain-bandwidth product collector current, i c (ma) v ce =10v 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3
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